| PART |
Description |
Maker |
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| IS42S16100A1 IS42S16100A1-10T IS42S16100A1-10TI IS |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
ISSI
|
| IS42VS16100C1-10T IS42VS16100C1-10TI IS42VS16100C1 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems
ICSI
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| 42S32200 IS42S32200-7T IS42S32200-7TI IS42S32200-6 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| TC59LM814CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TOSHIBA[Toshiba Semiconductor]
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| W9816G6IH W9816G6IH-7I W9816G6IH-6I W9816G6IH-5 |
512K × 2 BANKS × 16 BITS SDRAM
512K 隆驴 2 BANKS 隆驴 16 BITS SDRAM
|
Winbond
|
| W9816G6IB |
512K ?2 BANKS ?16 BITS SDRAM
|
Winbond
|
